Lead Frame
引线框架的表面处理，引线框架不仅能够用作连接半导体芯片和外部电路的导线，还可以用作将半导体封装固定到电子电路板上的框架，是一种核心材料。
※ 如果看不到下面的整体表格，可以通过左右移动表格来进行查看。
| Product | Concentration | Temp | Treatment Method | Time | Purpose |
|---|---|---|---|---|---|
| 2200MU | 100 vol% | 25 ± 5 ˚C | Dipping or Spray | 20~60sec | Cu Micro Etching |
| 2200RE | 100 vol% | 25 ± 5 ˚C | Dipping or Spray | 20~60sec | Cu Micro Etching |
| 727ABO | 0.3 vol% over | 25 ± 5 ˚C | Dipping or Spray | 10sec over | RBO agent |
| A-800 | 100 ± 50 gr/lt | 25 ± 5 ˚C | Dipping or Spray | 7sec over | Pretreatment agent for plating |
| AT-500A | 5 vol% over | 35 ± 5 ˚C | Dipping or Spray | 10sec over | CPO & RBO agent |
| AUS-100 | 100 gr/lt over | 30 ± 5 ˚C | Dipping or Spray | 10sec over | Gold Stripper |
| CP-5000 | 10 ± 5 vol% | 25 ± 5 ˚C | Dipping or Spray | 7sec over | Cu chemical polishing |
| DFM-3 | 15 vol% over | 40 ± 5 ˚C | Dipping or Spray | 10sec over | P.R stripper |
| DFM-1 | 15 ± 5 vol% | 50 ± 5 ˚C | Spray or Ultrasonic | 40~120sec | DRY FILM stripping |
| ES-500A | 5 vol% over | ROOM | Dipping & Spray | Soft etchant | |
| NIB-1, NIB-2 | control | 40~55 ˚C | Dipping or Spray | 40~120sec | Sulfamic acid nickel plating additive |
| CP-3000 | 10 ± 5 vol% | Room Temperature | Dipping or Spray | 7sec over | Ni chemical polishing |
| PRC-100 | 100 vol% | 25 ± 5 ˚C | 3 ASD over | 25sec over | plating Cu |
| TCE-100 | 10 ± 5 vol% | 25 ± 5 ˚C | 1 ASD over dipping | 7~20sec | Electro Cleaner |
| U202 | 100 vol% | 45 ± 5 ˚C | 0.5 ASD over | 10sec over | Cu strike |
| U4000L | 10 ± 5 vol% | 25 ± 5 ˚C | Dipping or Spray | 7sec over | Cu soft etchant |
| U725A | 10 ± 5 vol% | 25 ± 5 ˚C | Dipping or Spray | 7sec over | Ag Anti-immersion |
| U750 | 40 gr/lt over | 20 ± 5 ˚C | Dipping or Spray | 10sec over | Ag stripper |
| U753 | 15 vol% over | 20 ± 5 ˚C | Dipping or Spray | 10sec over | Ag stripper |
| UPR-100 | Photo Resist |