Semiconductor Packaging
반도체 칩을 기판에 탑제하여 wire bonding 및 epoxy molding
※ 아래 표 전체가 보이지 않으시면 표를 좌우로 움직여 확인이 가능합니다.
| Product | Concentration | Temp | Treatment Method | Time | Purpose |
|---|---|---|---|---|---|
| 801CD | 100 vol% | 60~85˚C | Dipping or Ultrasonic | 5min. over | Mid. Alkali Stand Alone M/C |
| 815ED | 20~50 vol% | 40~55 ˚C | Electro 4 volt over | 2min. over | Strong Alkali N/A |
| 815LDB | 30 vol% over | 40~55 ˚C | Electro 3 volt over | 1min. over | Strong Alkali N/A |
| 815PPF | min 90% | 70~100 ˚C | dipping/spray | min 3mins | Removal oxide on Cu surface |
| 818NC | 100 vol% | 65~85 ˚C | Dipping or Ultrasonic | 5min. over | Removal various organic/contamination & resin flash on Cu surface |
| 819PC | 100 vol% | 70~85 ˚C | Dipping or Ultrasonic | 5min. over | Weak Acid deflash |
| 819TW | 98 vol% over | 70~100 ˚C | dipping/spray | 5min. over | Chemical Deflash |
| UNIS 761 | 70% | 20 ~ 30˚C | balance | Sn/pb stripping for Cu/Cu-alloy, alloy42 | |
| UNIS 765 | 70% | 20 ~ 30˚C | balance | Sn stripping on Belt or Rack | |
| CP-5000 | 10~100% | 20 ~ 30˚C | 5sec~1min | Descaling, Polishing for Cu/Cu alloy |